View IRFB4233PBF_546098.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 97004
PDP SWITCH
Features l Advanced process technology l Key parameters optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE rating to reduce power dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for fast response l High repetitive peak current capability for reliable operation l Short fall & rise times for fast switching l175C operating junction temperature for improved ruggedness l Repetitive avalanche capability for robustness and reliability
IRFB4233PBF
Key Parameters
230 276 31 114 175 V V m: A C
VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100C TJ max
D
G S
TO-220AB
Description This HEXFET(R) Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS ID @ TC = 25C ID @ TC = 100C IDM IRP @ TC = 100C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Repetitive Peak Current g Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) N
Max.
30 56 39 220 114 370 190 2.5 -40 to + 175
Units
V A
W W/C C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case f Case-to-Sink, Flat, Greased Surface Junction-to-Ambient f Typ. --- 0.50 --- Max. 0.402 --- 62 Units C/W
Notes through are on page 8
www.irf.com
1
6/8/05
IRFB4233PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgd tst EPULSE Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Drain Charge Shoot Through Blocking Time Energy per Pulse
Min.
230 --- --- 3.0 --- --- --- --- --- 83 --- --- 100 --- ---
Typ. Max. Units
--- 200 31 --- -14 --- --- --- --- --- 120 44 --- 460 970 5510 480 220 340 4.5 7.5 --- --- 37 5.0 --- 5.0 150 100 -100 --- 170 --- --- --- --- --- --- --- --- --- nH --- pF ns J S nC nA V m V mV/C A
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 28A e VDS = VGS, ID = 250A VDS = 184V, VGS = 0V VDS = 184V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 25V, ID = 39A VDD = 115V, ID = 39A, VGS = 10Ve VDD = 184V, VGS = 15V, RG= 4.7 L = 220nH, C= 0.4F, VGS = 15V VDS = 184V, RG= 4.7, TJ = 25C L = 220nH, C= 0.4F, VGS = 15V VDS = 184V, RG= 4.7, TJ = 100C VGS = 0V VDS = 25V = 1.0MHz, VGS = 0V, VDS = 0V to 184V Between lead, 6mm (0.25in.) from package and center of die contact
G S D
mV/C Reference to 25C, ID = 1mA
Ciss Coss Crss Coss eff. LD LS
Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance
--- --- --- --- --- ---
Avalanche Characteristics
Parameter Typ. Max. Units mJ mJ V A
EAS EAR VDS(Avalanche) IAS
Single Pulse Avalanche Energyd Repetitive Avalanche Energy c Repetitive Avalanche Voltage Avalanche Current d c
--- --- 276 ---
250 39 --- 39
Diode Characteristics
Parameter
IS @ TC = 25C Continuous Source Current (Body Diode) ISM VSD trr Qrr Pulsed Source Current (Body Diode) c --- --- --- --- 190 760 1.0 280 1140 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- 220
Min.
---
Typ. Max. Units
--- 56 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 39A, VGS = 0V e TJ = 25C, IF = 39A, VDD = 50V di/dt = 100A/s e
2
www.irf.com
IRFB4233PBF
1000
TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.3V
1000
TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.3V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
1
10
0.1
5.3V 60s PULSE WIDTH Tj = 175C
0.1 1 10 100
5.3V
0.01 0.1 1
60s PULSE WIDTH Tj = 25C
10 100
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000.00
Fig 2. Typical Output Characteristics
4.0
RDS(on) , Drain-to-Source On Resistance
ID = 39A
3.0
ID, Drain-to-Source Current()
100.00
VGS = 10V
TJ = 175C
10.00
(Normalized)
2.0
1.00
TJ = 25C
0.10
1.0
VDS = 25V
0.01 3.0 4.0 5.0 6.0
60s PULSE WIDTH
7.0 8.0 9.0
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
900 800
Fig 4. Normalized On-Resistance vs. Temperature
1000
Energy per pulse (J)
Energy per pulse (J)
700 600 500 400 300 200 130
L = 220nH C = 0.4F 100C 25C
800
L = 220nH C = Variable 100C 25C
600
400
200
0
140
150
160
170
180
190
120
130
140
150
160
170
180
VDS, Drain-to -Source Voltage (V)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
Fig 6. Typical EPULSE vs. Drain Current
ID, Peak Drain Current (A)
www.irf.com
3
IRFB4233PBF
1200 1000.0
L = 220nH C= 0.4F C= 0.3F C= 0.2F
ISD , Reverse Drain Current (A)
1000
Energy per pulse (J)
100.0
800
TJ = 175C
600
10.0
400
1.0
200
TJ = 25C VGS = 0V
0 25 50 75 100 125 150
0.1 0.2 0.4 0.6 0.8 1.0 1.2
Temperature (C)
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical EPULSE vs.Temperature
10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Fig 8. Typical Source-Drain Diode Forward Voltage
20
VGS, Gate-to-Source Voltage (V)
ID= 39A VDS = 184V VDS= 115V VDS= 46V
8000
16
C, Capacitance (pF)
6000
Ciss
12
4000
8
2000
4
Coss
0 1
Crss
10 100 1000
0 0 40 80 120 160 200 QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
60
OPERATION IN THIS AREA LIMITED BY R DS (on) 1sec 10sec
50
ID , Drain Current (A)
100
40
30
10
100sec
20
1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 100 1000
10
0 25 50 75 100 125 150 175
TC , CaseTemperature (C)
VDS , Drain-to-Source Voltage (V)
Fig 11. Maximum Drain Current vs. Case Temperature
Fig 12. Maximum Safe Operating Area
4
www.irf.com
IRFB4233PBF
RDS (on), Drain-to -Source On Resistance ( )
EAS, Single Pulse Avalanche Energy (mJ)
0.16
1200
ID = 39A
0.12
1000
ID 13A 18A BOTTOM 39A
TOP
800
0.08
TJ = 125C
600
400
0.04
TJ = 25C
0.00 4 6 8 10 12 14 16
200
0 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (C)
Fig 13. On-Resistance Vs. Gate Voltage
5.5
Fig 14. Maximum Avalanche Energy Vs. Temperature
180 160
VGS(th) Gate threshold Voltage (V)
5.0
Repetitive Peak Current (A)
4.5 4.0 3.5 3.0 2.5 2.0 1.5 -75 -50 -25 0 25 50 75 100 125 150 175
140 120 100 80 60 40 20 0 25 50 75 100
ton= 1s Duty cycle = 0.25 Half Sine Wave Square Pulse
ID = 250A
125
150
175
TJ , Temperature ( C )
Case Temperature (C)
Fig 15. Threshold Voltage vs. Temperature
1
Fig 16. Typical Repetitive peak Current vs. Case temperature
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05 0.02 0.01
R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
0.01
J
Ri (C/W) i (sec) 0.05443 0.000069 0.12807 0.001767 0.21933 0.02082
1
2
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1
0.0001 1E-006 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFB4233PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 19a. Unclamped Inductive Test Circuit
Fig 19b. Unclamped Inductive Waveforms
Id Vds Vgs
L
0
DUT 1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
6
www.irf.com
IRFB4233PBF
Fig 21a. tst and EPULSE Test Circuit
Fig 21b. tst Test Waveforms
Fig 21c. EPULSE Test Waveforms
www.irf.com
7
IRFB4233PBF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T HE AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
TO-220AB packages are not recommended for Surface Mount Application.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.34mH, RG = 25, IAS = 39A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. Half sine wave with duty cycle = 0.25, ton=1sec.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/05
8
www.irf.com

▲Up To Search▲

Price & Availability of IRFB4233PBF

	To Download IRFB4233PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .